We study the growth of GaN thin films on γ-LiAlO2 substrate by radio frequency plasma-assisted molecular beam epitaxy (rf-MBE).
The films were monitored in-situ by reflection high-energy electron diffraction (RHEED). After growth, the samples are characterized by double crystal X-ray diffraction (DXRD), atomic force microscopy (AFM), photoluminescence (PL), Hall effect measurements.
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